All MOSFET. SQJ860EP Datasheet

 

SQJ860EP Datasheet and Replacement


   Type Designator: SQJ860EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 265 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: SO-8
 

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SQJ860EP Datasheet (PDF)

 ..1. Size:264K  vishay
 sqj860ep.pdf pdf_icon

SQJ860EP

SQJ860EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization: for definitions of compliance please see 1Swww.vishay.com/doc?999122S3S4D1 GTop View Bottom ViewPRODUCT SUMMARYVDS (V) 40G

 9.1. Size:218K  vishay
 sqj868ep.pdf pdf_icon

SQJ860EP

SQJ868EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization: for definitions of compliance please see1www.vishay.com/doc?99912S2S3DS41 GTop View Bottom View GPRODUCT SUMMARYVDS (V) 40N-

Datasheet: SQJ446EP , SQJ454EP , SQJ457EP , SQJ464EP , SQJ474EP , SQJ476EP , SQJ479EP , SQJ570EP , K2611 , SQJ868EP , SQJ912BEP , SQJ914EP , SQJ946EP , SQJ956EP , SQJ958EP , SQJ990EP , SQJA00EP .

History: HYG023N03LR1U | 18N20

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