SQJA20EP Datasheet. Specs and Replacement

Type Designator: SQJA20EP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 456 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SO-8

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SQJA20EP datasheet

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SQJA20EP

SQJA20EP www.vishay.com Vishay Siliconix Automotive N-Channel 200 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested D Material categorization for definitions of compliance please see 1 S www.vishay.com/doc?99912 2 S 3 D S 4 1 G Top View Bottom View PRODUCT SUMMARY G VDS (V) 200 R... See More ⇒

Detailed specifications: SQJ946EP, SQJ956EP, SQJ958EP, SQJ990EP, SQJA00EP, SQJA02EP, SQJA04EP, SQJA06EP, IRF9640, SQJA60EP, SQJA68EP, SQJA70EP, SQJA82EP, SQJA84EP, SQJA86EP, SQJA88EP, SQJA94EP

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