SQJA20EP MOSFET. Datasheet pdf. Equivalent
Type Designator: SQJA20EP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 22.5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 17.6 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 456 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SO-8
SQJA20EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQJA20EP Datasheet (PDF)
..1. Size:298K vishay
sqja20ep.pdf
sqja20ep.pdf
SQJA20EPwww.vishay.comVishay SiliconixAutomotive N-Channel 200 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization:for definitions of compliance please see1Swww.vishay.com/doc?999122S3DS41 GTop View Bottom ViewPRODUCT SUMMARYGVDS (V) 200R
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
