All MOSFET. SQJA20EP Datasheet

 

SQJA20EP Datasheet and Replacement


   Type Designator: SQJA20EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 456 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SO-8
 

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SQJA20EP Datasheet (PDF)

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SQJA20EP

SQJA20EPwww.vishay.comVishay SiliconixAutomotive N-Channel 200 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization:for definitions of compliance please see1Swww.vishay.com/doc?999122S3DS41 GTop View Bottom ViewPRODUCT SUMMARYGVDS (V) 200R

Datasheet: SQJ946EP , SQJ956EP , SQJ958EP , SQJ990EP , SQJA00EP , SQJA02EP , SQJA04EP , SQJA06EP , AON7403 , SQJA60EP , SQJA68EP , SQJA70EP , SQJA82EP , SQJA84EP , SQJA86EP , SQJA88EP , SQJA94EP .

History: GSM3452 | IRLI3615P | IPT015N10N5 | SLB80R380SJ | SLP80R500SJ | S60N06M | IRLB8721P

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