All MOSFET. SQJB60EP Datasheet

 

SQJB60EP Datasheet and Replacement


   Type Designator: SQJB60EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 18 nC
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 506 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SO-8
 

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SQJB60EP Datasheet (PDF)

 ..1. Size:269K  vishay
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SQJB60EP

SQJB60EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualifiedD1 100 % Rg and UIS tested Material categorization: D2for definitions of compliance please see1S1 www.vishay.com/doc?999122G13S241 D11 G2D2Top View Bottom ViewPRODUCT SUMMARY

 9.1. Size:283K  vishay
 sqjb68ep.pdf pdf_icon

SQJB60EP

SQJB68EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 100 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualifiedD1 100 % Rg and UIS tested Material categorization: D2for definitions of compliance please see 1S1 www.vishay.com/doc?999122G13S241 G21D1D2Top View Bottom ViewPRODUCT SUMMA

Datasheet: SQJA84EP , SQJA86EP , SQJA88EP , SQJA94EP , SQJA96EP , SQJB00EP , SQJB40EP , SQJB42EP , IRFZ44N , SQJB68EP , SQJB70EP , SQJB80EP , SQJB90EP , SQM50028EM , SQM90142E , SQP90142E , SQS401ENW .

History: 2SK3065T100

Keywords - SQJB60EP MOSFET datasheet

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