SQJB90EP MOSFET. Datasheet pdf. Equivalent
Type Designator: SQJB90EP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 48 W
Maximum Drain-Source Voltage |Vds|: 80 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 30 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 14 nC
Rise Time (tr): 3 nS
Drain-Source Capacitance (Cd): 445 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0215 Ohm
Package: SO-8
SQJB90EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQJB90EP Datasheet (PDF)
..1. sqjb90ep.pdf 
Size:274K _vishay
SQJB90EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 80 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualifiedD1 100 % Rg and UIS tested Material categorization: D2for definitions of compliance please see1S1 www.vishay.com/doc?999122G13S24D1D211 G2Top View Bottom ViewPRODUCT SUMMARY
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