SQJB90EP Datasheet. Specs and Replacement
Type Designator: SQJB90EP 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 445 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0215 Ohm
Package: SO-8
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SQJB90EP substitution
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SQJB90EP datasheet
sqjb90ep.pdf
SQJB90EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 80 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualified D1 100 % Rg and UIS tested Material categorization D2 for definitions of compliance please see 1 S1 www.vishay.com/doc?99912 2 G1 3 S2 4 D1 D2 1 1 G2 Top View Bottom View PRODUCT SUMMARY... See More ⇒
Detailed specifications: SQJA96EP, SQJB00EP, SQJB40EP, SQJB42EP, SQJB60EP, SQJB68EP, SQJB70EP, SQJB80EP, 20N60, SQM50028EM, SQM90142E, SQP90142E, SQS401ENW, SQS481ENW, SQS482ENW, SQS484ENW, SQSA80ENW
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