All MOSFET. SQJB90EP Datasheet

 

SQJB90EP MOSFET. Datasheet pdf. Equivalent

Type Designator: SQJB90EP

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 48 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 14 nC

Rise Time (tr): 3 nS

Drain-Source Capacitance (Cd): 445 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0215 Ohm

Package: SO-8

SQJB90EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQJB90EP Datasheet (PDF)

..1. sqjb90ep.pdf Size:274K _vishay

SQJB90EP SQJB90EP

SQJB90EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 80 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualifiedD1 100 % Rg and UIS tested Material categorization: D2for definitions of compliance please see1S1 www.vishay.com/doc?999122G13S24D1D211 G2Top View Bottom ViewPRODUCT SUMMARY

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRFZ44 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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