All MOSFET. SQJB90EP Datasheet

 

SQJB90EP Datasheet and Replacement


   Type Designator: SQJB90EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 445 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0215 Ohm
   Package: SO-8
 

 SQJB90EP substitution

   - MOSFET ⓘ Cross-Reference Search

 

SQJB90EP Datasheet (PDF)

 ..1. Size:274K  vishay
 sqjb90ep.pdf pdf_icon

SQJB90EP

SQJB90EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 80 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualifiedD1 100 % Rg and UIS tested Material categorization: D2for definitions of compliance please see1S1 www.vishay.com/doc?999122G13S24D1D211 G2Top View Bottom ViewPRODUCT SUMMARY

Datasheet: SQJA96EP , SQJB00EP , SQJB40EP , SQJB42EP , SQJB60EP , SQJB68EP , SQJB70EP , SQJB80EP , 20N60 , SQM50028EM , SQM90142E , SQP90142E , SQS401ENW , SQS481ENW , SQS482ENW , SQS484ENW , SQSA80ENW .

Keywords - SQJB90EP MOSFET datasheet

 SQJB90EP cross reference
 SQJB90EP equivalent finder
 SQJB90EP lookup
 SQJB90EP substitution
 SQJB90EP replacement

 

 
Back to Top

 


 
.