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SQJB90EP PDF Specs and Replacement


   Type Designator: SQJB90EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 445 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0215 Ohm
   Package: SO-8
 

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SQJB90EP PDF Specs

 ..1. Size:274K  vishay
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SQJB90EP

SQJB90EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 80 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualified D1 100 % Rg and UIS tested Material categorization D2 for definitions of compliance please see 1 S1 www.vishay.com/doc?99912 2 G1 3 S2 4 D1 D2 1 1 G2 Top View Bottom View PRODUCT SUMMARY... See More ⇒

Detailed specifications: SQJA96EP , SQJB00EP , SQJB40EP , SQJB42EP , SQJB60EP , SQJB68EP , SQJB70EP , SQJB80EP , 20N60 , SQM50028EM , SQM90142E , SQP90142E , SQS401ENW , SQS481ENW , SQS482ENW , SQS484ENW , SQSA80ENW .

History: DHS045N98B

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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