All MOSFET. SQM90142E Datasheet

 

SQM90142E MOSFET. Datasheet pdf. Equivalent

Type Designator: SQM90142E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 375 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 95 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 55 nC

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 1300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0153 Ohm

Package: TO-263

SQM90142E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQM90142E Datasheet (PDF)

..1. sqm90142e.pdf Size:172K _vishay

SQM90142E SQM90142E

SQM90142Ewww.vishay.comVishay SiliconixAutomotive N-Channel 200 V (D-S) 175 C MOSFETFEATURES TrenchFET power MOSFETTO-263 Package with low thermal resistance AEC-Q101 qualified 100 % Rg and UIS tested Material categorization: for definitions of compliance please seewww.vishay.com/doc?99912SSDDGGTop ViewDPRODUCT SUMMARYGVDS (V) 200

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF3710 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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