SQM90142E Datasheet. Specs and Replacement

Type Designator: SQM90142E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 95 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 1300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0153 Ohm

Package: TO-263

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SQM90142E datasheet

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SQM90142E

SQM90142E www.vishay.com Vishay Siliconix Automotive N-Channel 200 V (D-S) 175 C MOSFET FEATURES TrenchFET power MOSFET TO-263 Package with low thermal resistance AEC-Q101 qualified 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 S S D D G G Top View D PRODUCT SUMMARY G VDS (V) 200... See More ⇒

Detailed specifications: SQJB40EP, SQJB42EP, SQJB60EP, SQJB68EP, SQJB70EP, SQJB80EP, SQJB90EP, SQM50028EM, IRF540, SQP90142E, SQS401ENW, SQS481ENW, SQS482ENW, SQS484ENW, SQSA80ENW, SUD08P06-155L-GE3, SUD80460E

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