SQM90142E MOSFET. Datasheet pdf. Equivalent
Type Designator: SQM90142E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 375 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 95 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 55 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 1300 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0153 Ohm
Package: TO-263
SQM90142E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQM90142E Datasheet (PDF)
..1. sqm90142e.pdf 
Size:172K _vishay
SQM90142Ewww.vishay.comVishay SiliconixAutomotive N-Channel 200 V (D-S) 175 C MOSFETFEATURES TrenchFET power MOSFETTO-263 Package with low thermal resistance AEC-Q101 qualified 100 % Rg and UIS tested Material categorization: for definitions of compliance please seewww.vishay.com/doc?99912SSDDGGTop ViewDPRODUCT SUMMARYGVDS (V) 200
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