All MOSFET. SQP90142E Datasheet

 

SQP90142E MOSFET. Datasheet pdf. Equivalent

Type Designator: SQP90142E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 78.5 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 55 nC

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 1300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0153 Ohm

Package: TO-220AB

SQP90142E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQP90142E Datasheet (PDF)

 ..1. Size:164K  vishay
 sqp90142e.pdf

SQP90142E SQP90142E

SQP90142Ewww.vishay.comVishay SiliconixAutomotive N-Channel 200 V (D-S) 175 C MOSFETFEATURESTO-220AB TrenchFET power MOSFET Package with low thermal resistance AEC-Q101 qualified 100 % Rg and UIS tested Material categorization: for definitions of compliance please seewww.vishay.com/doc?99912SSDGDTop ViewPRODUCT SUMMARYGVDS (V) 200RD

 9.1. Size:143K  vishay
 sqp90p06-07l.pdf

SQP90142E SQP90142E

SQP90P06-07Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.0067 AEC-Q101 qualified dRDS(on) () at VGS = -4.5 V 0.0088 100 % Rg and UIS testedID (A) -120 Material categorization:Configuration Singl

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