All MOSFET. SQS482ENW Datasheet

 

SQS482ENW MOSFET. Datasheet pdf. Equivalent

Type Designator: SQS482ENW

Marking Code: Q034

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 62 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 26 nC

Rise Time (tr): 21 nS

Drain-Source Capacitance (Cd): 280 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm

Package: POWERPAK-1212-8W

SQS482ENW Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQS482ENW Datasheet (PDF)

 ..1. Size:226K  vishay
sqs482enw.pdf

SQS482ENW
SQS482ENW

SQS482ENWwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPowerPAK 1212-8W SingleD TrenchFET power MOSFETD8DD7 AEC-Q101 qualified d7DD6655 100 % Rg and UIS tested Material categorization:for definitions of compliance please see www.vishay.com/doc?999121122SS33SSD44SS

 6.1. Size:560K  vishay
sqs482en.pdf

SQS482ENW
SQS482ENW

SQS482ENwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0085 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.01 Material categorization:ID (A) 16For definitions of compliance please seeConfiguration Singlewww.vi

 9.1. Size:561K  vishay
sqs484en.pdf

SQS482ENW
SQS482ENW

SQS484ENwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.009 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.01 Material categorization:ID (A) 16For definitions of compliance please seeConfiguration Singlewww.vis

 9.2. Size:258K  vishay
sqs481enw.pdf

SQS482ENW
SQS482ENW

SQS481ENWwww.vishay.comVishay SiliconixAutomotive P-Channel 150 V (D-S) 175 C MOSFETFEATURESPowerPAK 1212-8W Single TrenchFET power MOSFETDD8DD AEC-Q101 qualified d77DD66 100 % Rg and UIS tested55 Material categorization:for definitions of compliance please seewww.vishay.com/doc?999121122SS33 SSS44SS1

 9.3. Size:637K  vishay
sqs484enw.pdf

SQS482ENW
SQS482ENW

SQS484ENWwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPowerPAK 1212-8W Single TrenchFET power MOSFETDD8DD AEC-Q101 qualified77DD66 100 % Rg and UIS tested55 Material categorization:for definitions of compliance please see www.vishay.com/doc?999121122SS33 DSS44SS

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , MMIS60R580P , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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