All MOSFET. SQSA80ENW Datasheet


SQSA80ENW MOSFET. Datasheet pdf. Equivalent

Type Designator: SQSA80ENW

Marking Code: Q029

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 62.5 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 17 nC

Rise Time (tr): 2 nS

Drain-Source Capacitance (Cd): 422 pF

Maximum Drain-Source On-State Resistance (Rds): 0.021 Ohm

Package: POWERPAK-1212-8W

SQSA80ENW Transistor Equivalent Substitute - MOSFET Cross-Reference Search


SQSA80ENW Datasheet (PDF)

..1. sqsa80enw.pdf Size:625K _vishay


SQSA80ENWwww.vishay.comVishay SiliconixAutomotive N-Channel 80 V (D-S) 175 C MOSFETFEATURESPowerPAK 1212-8W Single TrenchFET power MOSFETDD8DD AEC-Q101 qualified77DD66 100 % Rg and UIS tested55 Material categorization:for definitions of compliance please see DSS44SS

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF3710 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .


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