SQSA80ENW MOSFET. Datasheet pdf. Equivalent
Type Designator: SQSA80ENW
Marking Code: Q029
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 62.5 W
Maximum Drain-Source Voltage |Vds|: 80 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 17 nC
Rise Time (tr): 2 nS
Drain-Source Capacitance (Cd): 422 pF
Maximum Drain-Source On-State Resistance (Rds): 0.021 Ohm
Package: POWERPAK-1212-8W
SQSA80ENW Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQSA80ENW Datasheet (PDF)
..1. sqsa80enw.pdf 
Size:625K _vishay
SQSA80ENWwww.vishay.comVishay SiliconixAutomotive N-Channel 80 V (D-S) 175 C MOSFETFEATURESPowerPAK 1212-8W Single TrenchFET power MOSFETDD8DD AEC-Q101 qualified77DD66 100 % Rg and UIS tested55 Material categorization:for definitions of compliance please see www.vishay.com/doc?999121122SS33 DSS44SS
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