All MOSFET. SQSA80ENW Datasheet

 

SQSA80ENW Datasheet and Replacement


   Type Designator: SQSA80ENW
   Marking Code: Q029
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 17 nC
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 422 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: POWERPAK-1212-8W
 

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SQSA80ENW Datasheet (PDF)

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SQSA80ENW

SQSA80ENWwww.vishay.comVishay SiliconixAutomotive N-Channel 80 V (D-S) 175 C MOSFETFEATURESPowerPAK 1212-8W Single TrenchFET power MOSFETDD8DD AEC-Q101 qualified77DD66 100 % Rg and UIS tested55 Material categorization:for definitions of compliance please see www.vishay.com/doc?999121122SS33 DSS44SS

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History: WMO10N65C4

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