SQSA80ENW Datasheet. Specs and Replacement

Type Designator: SQSA80ENW  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 422 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: POWERPAK-1212-8W

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SQSA80ENW datasheet

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SQSA80ENW

SQSA80ENW www.vishay.com Vishay Siliconix Automotive N-Channel 80 V (D-S) 175 C MOSFET FEATURES PowerPAK 1212-8W Single TrenchFET power MOSFET D D 8 D D AEC-Q101 qualified 7 7 D D 6 6 100 % Rg and UIS tested 5 5 Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 1 2 2 S S 3 3 D S S 4 4 S S ... See More ⇒

Detailed specifications: SQJB90EP, SQM50028EM, SQM90142E, SQP90142E, SQS401ENW, SQS481ENW, SQS482ENW, SQS484ENW, IRLZ44N, SUD08P06-155L-GE3, SUD80460E, SUM70060E, SUP10250E, SUP90142E, TN2404K, TN2404KL, 10N60L-TA3-T

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.