SUD08P06-155L-GE3 Datasheet and Replacement
Type Designator: SUD08P06-155L-GE3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 20.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2(typ) V
|Id|ⓘ - Maximum Drain Current: 8.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12.5 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 65 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
Package: TO-252
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SUD08P06-155L-GE3 Datasheet (PDF)
sud08p06-155l-ge3.pdf

SUD08P06-155L-GE3www.vishay.comVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESDPAK (TO-252)DPAK ( TrenchFET power MOSFETs Material categorization:Drain connected to tabfor definitions of compliance pleasesee www.vishay.com/doc?99912SSDGGTop ViewPRODUCT SUMMARYVDS (V) -60RDS(on) max. () at VGS = -10 V 0.155DRDS(on) max. () at VGS =
sud08p06-155l-e3.pdf

SUD08P06-155L-E3www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParame
sud08p06-155l.pdf

New ProductSUD08P06-155LVishay SiliconixP-Channel 60-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Rated Maximum Junction TemperatureRoHS0.155 at VGS = - 10 V - 8.4- 60 12.5 COMPLIANT0.280 at VGS = - 4.5 V - 7.4STO-252GDrain Connected to TabG D STop ViewDOrdering Information:
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: STW75NF30
Keywords - SUD08P06-155L-GE3 MOSFET datasheet
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SUD08P06-155L-GE3 replacement
History: STW75NF30



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