SUD08P06-155L-GE3 - Даташиты. Аналоги. Основные параметры

SUD08P06-155L-GE3 www.vishay.com Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES DPAK (TO-252) DPAK ( TrenchFET power MOSFETs Material categorization Drain connected to tab for definitions of compliance please see www.vishay.com/doc?99912 S S D G G Top View PRODUCT SUMMARY VDS (V) -60 RDS(on) max. ( ) at VGS = -10 V 0.155 D RDS(on) max. ( ) at VGS =

SUD08P06-155L-E3 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parame

New Product SUD08P06-155L Vishay Siliconix P-Channel 60-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) rDS(on) ( ) ID (A) Qg (Typ) 175 C Rated Maximum Junction Temperature RoHS 0.155 at VGS = - 10 V - 8.4 - 60 12.5 COMPLIANT 0.280 at VGS = - 4.5 V - 7.4 S TO-252 G Drain Connected to Tab G D S Top View D Ordering Information