All MOSFET. SUP10250E Datasheet

 

SUP10250E Datasheet and Replacement


   Type Designator: SUP10250E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 63 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 93 nS
   Cossⓘ - Output Capacitance: 184 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0315 Ohm
   Package: TO-220AB
 

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SUP10250E Datasheet (PDF)

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SUP10250E

SUP10250Ewww.vishay.comVishay SiliconixN-Channel 250 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Tuned for the lowest RDS-Coss FOM0.0315 at VGS = 10 V 63250 57.6 nC Maximum 175 C junction temperature0.0325 at VGS = 7.5 V 62 100 % Rg and UIS tested Material categorization:TO-2

Datasheet: SQS401ENW , SQS481ENW , SQS482ENW , SQS484ENW , SQSA80ENW , SUD08P06-155L-GE3 , SUD80460E , SUM70060E , IRFB4227 , SUP90142E , TN2404K , TN2404KL , 10N60L-TA3-T , 10N60G-TA3-T , 10N60L-TF3-T , 10N60G-TF3-T , 10N60L-TF1-T .

History: HM85N90 | 12N60L-TF2-T | NCEP12N12AK | RJK0703DPN-E0 | AOT2N60 | NCEP12T15 | RFP10N15

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