SUP10250E Datasheet. Specs and Replacement
Type Designator: SUP10250E 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 63 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 93 nS
Cossⓘ - Output Capacitance: 184 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0315 Ohm
Package: TO-220AB
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SUP10250E substitution
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SUP10250E datasheet
sup10250e.pdf
SUP10250E www.vishay.com Vishay Siliconix N-Channel 250 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Tuned for the lowest RDS-Coss FOM 0.0315 at VGS = 10 V 63 250 57.6 nC Maximum 175 C junction temperature 0.0325 at VGS = 7.5 V 62 100 % Rg and UIS tested Material categorization TO-2... See More ⇒
Detailed specifications: SQS401ENW, SQS481ENW, SQS482ENW, SQS484ENW, SQSA80ENW, SUD08P06-155L-GE3, SUD80460E, SUM70060E, AO3400, SUP90142E, TN2404K, TN2404KL, 10N60L-TA3-T, 10N60G-TA3-T, 10N60L-TF3-T, 10N60G-TF3-T, 10N60L-TF1-T
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