SUP10250E MOSFET. Datasheet pdf. Equivalent
Type Designator: SUP10250E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 375 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 63 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 57.6 nC
Rise Time (tr): 93 nS
Drain-Source Capacitance (Cd): 184 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0315 Ohm
Package: TO-220AB
SUP10250E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUP10250E Datasheet (PDF)
..1. sup10250e.pdf 
Size:165K _vishay
SUP10250Ewww.vishay.comVishay SiliconixN-Channel 250 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Tuned for the lowest RDS-Coss FOM0.0315 at VGS = 10 V 63250 57.6 nC Maximum 175 C junction temperature0.0325 at VGS = 7.5 V 62 100 % Rg and UIS tested Material categorization:TO-2
Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF3710 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .
