All MOSFET. SUP10250E Datasheet

 

SUP10250E MOSFET. Datasheet pdf. Equivalent

Type Designator: SUP10250E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 375 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 63 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 57.6 nC

Rise Time (tr): 93 nS

Drain-Source Capacitance (Cd): 184 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0315 Ohm

Package: TO-220AB

SUP10250E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUP10250E Datasheet (PDF)

..1. sup10250e.pdf Size:165K _vishay

SUP10250E
SUP10250E

SUP10250Ewww.vishay.comVishay SiliconixN-Channel 250 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Tuned for the lowest RDS-Coss FOM0.0315 at VGS = 10 V 63250 57.6 nC Maximum 175 C junction temperature0.0325 at VGS = 7.5 V 62 100 % Rg and UIS tested Material categorization:TO-2

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF3710 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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