STT03L03 Datasheet. Specs and Replacement

Type Designator: STT03L03  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.104 Ohm

Package: SOT223

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STT03L03 datasheet

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STT03L03

Green Product STT03L03 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 104 @ VGS=10V Surface Mount Package. 30V 3A 149 @ VGS=4.5V ESD Protected. D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM... See More ⇒

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 stt03l06.pdf pdf_icon

STT03L03

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 stt03n10.pdf pdf_icon

STT03L03

Green Product STT03N10 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 235 @ VGS=10V Surface Mount Package. 100V 2.5A 300 @ VGS=4.5V D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=2... See More ⇒

 9.2. Size:127K  samhop
 stt03n20.pdf pdf_icon

STT03L03

Green Product STT03N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Max VDSS ID Rugged and reliable. 2.43 @ VGS=10V Surface Mount Package. 200V 0.7A 2.66 @ VGS=4.5V D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA... See More ⇒

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Detailed specifications: FDD6796A, FDD6N20TM, STT03L06, FDD6N25, FDD6N50, FDD6N50F, FDD6N50TMF085, FDD7N20TM, IRFB4115, FDD7N25LZ, FDD8424H, STT02N20, FDD8424HF085, STT02N10, FDD8444, FDD8444F085, FDD8444LF085

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