All MOSFET. STT02N10 Datasheet

 

STT02N10 Datasheet and Replacement


   Type Designator: STT02N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Qg ⓘ - Total Gate Charge: 2 nC
   Cossⓘ - Output Capacitance: 24 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: SOT223
 

 STT02N10 substitution

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STT02N10 Datasheet (PDF)

 ..1. Size:134K  samhop
 stt02n10.pdf pdf_icon

STT02N10

GreenProductSTT02N10aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.400 @ VGS=10VSurface Mount Package.100V 2A480 @ VGS=4.5V D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=25

 8.1. Size:134K  samhop
 stt02n20.pdf pdf_icon

STT02N10

GreenProductSTT02N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) () TypVDSS IDRugged and reliable.1.22 @ VGS=10VSurface Mount Package.200V 1.4A1.29 @ VGS=4.5VD G GSSTT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS (TA=25

Datasheet: FDD6N50F , FDD6N50TMF085 , FDD7N20TM , STT03L03 , FDD7N25LZ , FDD8424H , STT02N20 , FDD8424HF085 , 2SK3878 , FDD8444 , FDD8444F085 , FDD8444LF085 , FDD8445 , FDD8445F085 , FDD8447L , FDD8447LF085 , FDD8451 .

Keywords - STT02N10 MOSFET datasheet

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