STT02N10 Specs and Replacement
Type Designator: STT02N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Cossⓘ - Output Capacitance: 24 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: SOT223
STT02N10 substitution
STT02N10 Specs
stt02n20.pdf
Green Product STT02N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Typ VDSS ID Rugged and reliable. 1.22 @ VGS=10V Surface Mount Package. 200V 1.4A 1.29 @ VGS=4.5V D G G S STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS (TA=25... See More ⇒
Detailed specifications: FDD6N50F , FDD6N50TMF085 , FDD7N20TM , STT03L03 , FDD7N25LZ , FDD8424H , STT02N20 , FDD8424HF085 , IRFP250N , FDD8444 , FDD8444F085 , FDD8444LF085 , FDD8445 , FDD8445F085 , FDD8447L , FDD8447LF085 , FDD8451 .
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