STT02N10 Datasheet. Specs and Replacement

Type Designator: STT02N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 24 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: SOT223

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STT02N10 datasheet

 ..1. Size:134K  samhop
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STT02N10

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STT02N10

Green Product STT02N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Typ VDSS ID Rugged and reliable. 1.22 @ VGS=10V Surface Mount Package. 200V 1.4A 1.29 @ VGS=4.5V D G G S STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS (TA=25... See More ⇒

Detailed specifications: FDD6N50F, FDD6N50TMF085, FDD7N20TM, STT03L03, FDD7N25LZ, FDD8424H, STT02N20, FDD8424HF085, IRF630, FDD8444, FDD8444F085, FDD8444LF085, FDD8445, FDD8445F085, FDD8447L, FDD8447LF085, FDD8451

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