All MOSFET. STT02N10 Datasheet

 

STT02N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: STT02N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 2 A

Total Gate Charge (Qg): 14 nC

Drain-Source Capacitance (Cd): 24 pF

Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm

Package: SOT223

STT02N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STT02N10 Datasheet (PDF)

0.1. stt02n10.pdf Size:134K _samhop

STT02N10
STT02N10

Green Product STT02N10 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Typ Rugged and reliable. 400 @ VGS=10V Surface Mount Package. 100V 2A 480 @ VGS=4.5V D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=25

8.1. stt02n20.pdf Size:134K _samhop

STT02N10
STT02N10

Green Product STT02N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (Ω) Typ VDSS ID Rugged and reliable. 1.22 @ VGS=10V Surface Mount Package. 200V 1.4A 1.29 @ VGS=4.5V D G G S STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS (TA=25

 

Datasheet: FDD6N50F , FDD6N50TM_F085 , FDD7N20TM , STT03L03 , FDD7N25LZ , FDD8424H , STT02N20 , FDD8424H_F085 , IRF730 , FDD8444 , FDD8444_F085 , FDD8444L_F085 , FDD8445 , FDD8445_F085 , FDD8447L , FDD8447L_F085 , FDD8451 .

 

 
Back to Top