STT02N07 Specs and Replacement
Type Designator: STT02N07
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 32 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.216 Ohm
Package: SOT223
STT02N07 substitution
- MOSFET ⓘ Cross-Reference Search
STT02N07 datasheet
stt02n20.pdf
Green Product STT02N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Typ VDSS ID Rugged and reliable. 1.22 @ VGS=10V Surface Mount Package. 200V 1.4A 1.29 @ VGS=4.5V D G G S STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS (TA=25... See More ⇒
Detailed specifications: FDD8445 , FDD8445F085 , FDD8447L , FDD8447LF085 , FDD8451 , FDD8453LZ , FDD8453LZF085 , FDD850N10L , IRFP260 , FDD86102 , STT01N20 , FDD86102LZ , STT01L10 , FDD86250 , FDD86326 , FDD8647L , FDD8770 .
Keywords - STT02N07 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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