STT01L10 Specs and Replacement
Type Designator: STT01L10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 28 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
Package: SOT223
STT01L10 substitution
- MOSFET ⓘ Cross-Reference Search
STT01L10 datasheet
stt01l10.pdf
Green Product STT01L10 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 310 @ VGS=10V Surface Mount Package. 100V 1.5A 350 @ VGS=4.5V D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=2... See More ⇒
stt01l07.pdf
Green Product STT01L07 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 526 @ VGS=10V Surface Mount Package. 70V 1.5A 617 @ VGS=4.5V ESD Protected. D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIM... See More ⇒
Detailed specifications: FDD8451 , FDD8453LZ , FDD8453LZF085 , FDD850N10L , STT02N07 , FDD86102 , STT01N20 , FDD86102LZ , K4145 , FDD86250 , FDD86326 , FDD8647L , FDD8770 , FDD8778 , FDD8780 , FDD8782 , FDD8796 .
History: FXN4N65D
Keywords - STT01L10 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: FXN4N65D
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