STT01L10 MOSFET. Datasheet pdf. Equivalent

   Type Designator: STT01L10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Qgⓘ - Total Gate Charge: 4.2 nC
   Cossⓘ - Output Capacitance: 28 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: SOT223

STT01L10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS