All MOSFET. STT01L10 Datasheet

 

STT01L10 Datasheet and Replacement


   Type Designator: STT01L10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: SOT223
 

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STT01L10 Datasheet (PDF)

 ..1. Size:126K  samhop
 stt01l10.pdf pdf_icon

STT01L10

GreenProductSTT01L10aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.310 @ VGS=10VSurface Mount Package.100V 1.5A350 @ VGS=4.5V D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=2

 8.1. Size:133K  samhop
 stt01l07.pdf pdf_icon

STT01L10

GreenProductSTT01L07aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.526 @ VGS=10VSurface Mount Package.70V 1.5A617 @ VGS=4.5V ESD Protected.D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIM

Datasheet: FDD8451 , FDD8453LZ , FDD8453LZF085 , FDD850N10L , STT02N07 , FDD86102 , STT01N20 , FDD86102LZ , IRFB3607 , FDD86250 , FDD86326 , FDD8647L , FDD8770 , FDD8778 , FDD8780 , FDD8782 , FDD8796 .

History: 3N80G-TMS4-R

Keywords - STT01L10 MOSFET datasheet

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