STT01L10 Datasheet. Specs and Replacement

Type Designator: STT01L10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm

Package: SOT223

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STT01L10 datasheet

 ..1. Size:126K  samhop
 stt01l10.pdf pdf_icon

STT01L10

Green Product STT01L10 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 310 @ VGS=10V Surface Mount Package. 100V 1.5A 350 @ VGS=4.5V D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=2... See More ⇒

 8.1. Size:133K  samhop
 stt01l07.pdf pdf_icon

STT01L10

Green Product STT01L07 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 526 @ VGS=10V Surface Mount Package. 70V 1.5A 617 @ VGS=4.5V ESD Protected. D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIM... See More ⇒

Detailed specifications: FDD8451, FDD8453LZ, FDD8453LZF085, FDD850N10L, STT02N07, FDD86102, STT01N20, FDD86102LZ, P55NF06, FDD86250, FDD86326, FDD8647L, FDD8770, FDD8778, FDD8780, FDD8782, FDD8796

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