2P50G-TN3-R PDF and Equivalents Search

 

2P50G-TN3-R Specs and Replacement

Type Designator: 2P50G-TN3-R

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 59 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm

Package: TO252

2P50G-TN3-R substitution

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2P50G-TN3-R datasheet

 ..1. Size:477K  utc
 2p50l-aa3-r 2p50g-aa3-r 2p50l-tn3-r 2p50g-tn3-r.pdf pdf_icon

2P50G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 2P50 POWER MOSFET -2A, -500V P-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC 2P50 is a P-channel MOS Field Effect Transistor. it uses UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC 2P50 is suitable for high voltage switching applications. 1 FEATURES SOT-... See More ⇒

Detailed specifications: 2N90G-TM3-T, 2N90L-TN3-R, 2N90G-TN3-R, 2N90L-TND-R, 2N90G-TND-R, 2P50L-AA3-R, 2P50G-AA3-R, 2P50L-TN3-R, 20N50, 30N06L-TA3-T, 30N06G-TA3-T, 30N06L-TF1-T, 30N06G-TF1-T, 30N06L-TF2-T, 30N06G-TF2-T, 30N06L-TF3-T, 30N06L-TM3-T

Keywords - 2P50G-TN3-R MOSFET specs

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