STS6415 Datasheet. Specs and Replacement

Type Designator: STS6415  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TSOT26

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STS6415 datasheet

 ..1. Size:105K  samhop
 sts6415.pdf pdf_icon

STS6415

Gre r r P Pr Pr Pro STS6415 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 100 @ VGS=-4.5V Suface Mount Package. 105 @ VGS=-4.0V ESD Protected. -20V -2.8A 110 @ VGS=-3.7V 121 @ VGS=-3.1V 138 @ VGS=-2.5V D SOT ... See More ⇒

 9.1. Size:106K  samhop
 sts6409.pdf pdf_icon

STS6415

re r r P Pr Pr Pro STS6409 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 49 @ VGS=-4.5V Suface Mount Package. 50 @ VGS=-4.0V ESD Protected. 52 @ VGS=-3.7V -20V -4.0A 58 @ VGS=-3.1V 65 @ VGS=-2.5V D SOT 26 T... See More ⇒

Detailed specifications: STS8816, FDD8874, STS6N20, FDD8876, STS6604L, FDD8878, STS6601, FDD8880, IRF1407, FDD8882, STS6409, FDD8896, STS6308, FDD8896F085, STS4622, FDD8N50NZ, FDG1024NZ

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