All MOSFET. STS6415 Datasheet

 

STS6415 Datasheet and Replacement


   Type Designator: STS6415
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TSOT26
 

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STS6415 Datasheet (PDF)

 ..1. Size:105K  samhop
 sts6415.pdf pdf_icon

STS6415

GrerrPPrPrProSTS6415aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.100 @ VGS=-4.5VSuface Mount Package.105 @ VGS=-4.0VESD Protected.-20V -2.8A 110 @ VGS=-3.7V121 @ VGS=-3.1V138 @ VGS=-2.5VDSOT

 9.1. Size:106K  samhop
 sts6409.pdf pdf_icon

STS6415

rerrPPrPrProSTS6409aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.49 @ VGS=-4.5VSuface Mount Package.50 @ VGS=-4.0VESD Protected.52 @ VGS=-3.7V-20V -4.0A58 @ VGS=-3.1V65 @ VGS=-2.5VDSOT 26T

Datasheet: STS8816 , FDD8874 , STS6N20 , FDD8876 , STS6604L , FDD8878 , STS6601 , FDD8880 , 5N65 , FDD8882 , STS6409 , FDD8896 , STS6308 , FDD8896F085 , STS4622 , FDD8N50NZ , FDG1024NZ .

History: ZXMS6001N3 | FCD4N60TM

Keywords - STS6415 MOSFET datasheet

 STS6415 cross reference
 STS6415 equivalent finder
 STS6415 lookup
 STS6415 substitution
 STS6415 replacement

 

 
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