6N80G-TF1-T Specs and Replacement

Type Designator: 6N80G-TF1-T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO220F

6N80G-TF1-T substitution

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6N80G-TF1-T datasheet

 ..1. Size:192K  utc
 6n80l-ta3-t 6n80g-ta3-t 6n80l-tf3-t 6n80g-tf3-t 6n80l-tf1-t 6n80g-tf1-t 6n80l-t2q-t 6n80g-t2q-t.pdf pdf_icon

6N80G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 6N80 Power MOSFET 6.0A, 800V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 6N80 is a N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe 1 TO-220F and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. It also can ... See More ⇒

 9.1. Size:478K  silikron
 ssf6n80g.pdf pdf_icon

6N80G-TF1-T

SSF6N80G Main Product Characteristics VDSS 800V RDS(on) 2.35 (typ.) ID 5.5A Marking and p in TO-251 (IPAK) Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov... See More ⇒

Detailed specifications: 6N70KG-TN3-R, 6N70KL-TND-R, 6N70KG-TND-R, 6N80L-TA3-T, 6N80G-TA3-T, 6N80L-TF3-T, 6N80G-TF3-T, 6N80L-TF1-T, K3569, 6N80L-T2Q-T, 6N80G-T2Q-T, 75N75L-TA3-T, 75N75G-TA3-T, 75N75L-TF1-T, 75N75G-TF1-T, 75N75L-TF2-T, 75N75G-TF2-T

Keywords - 6N80G-TF1-T MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs