6N80G-TF1-T MOSFET. Datasheet pdf. Equivalent

   Type Designator: 6N80G-TF1-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO220F

6N80G-TF1-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS