All MOSFET. FDG6332C Datasheet

 

FDG6332C Datasheet and Replacement


   Type Designator: FDG6332C
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id| ⓘ - Maximum Drain Current: 0.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 1.4 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SC70
 

 FDG6332C substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDG6332C Datasheet (PDF)

 ..1. Size:93K  fairchild semi
fdg6332c.pdf pdf_icon

FDG6332C

September 2003FDG6332C20V N & P-Channel PowerTrench MOSFETsGeneral Description FeaturesThe N & P-Channel MOSFETs are produced using Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 400 m @ VGS = 2.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior Q2

 ..2. Size:279K  fairchild semi
fdg6332c f085.pdf pdf_icon

FDG6332C

March 2009FDG6332C_F08520V N & P-Channel PowerTrench MOSFETsFeatures General DescriptionThe N & P-Channel MOSFETs are produced using Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 400 m @ VGS = 2.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior Q2

 ..3. Size:277K  onsemi
fdg6332c.pdf pdf_icon

FDG6332C

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:278K  onsemi
fdg6332c-f085.pdf pdf_icon

FDG6332C

FDG6332C-F08520V N & P-Channel PowerTrench MOSFETsGeneral DescriptionFeaturesThe N & P-Channel MOSFETs are produced using Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 VON Semiconductors advanced PowerTrench RDS(ON) = 400 m @ VGS = 2.5 Vprocess that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Datasheet: FDG6318P , FDG6318PZ , FDG6320C , STS4501 , FDG6321C , STS4300 , FDG6322C , STS400 , IRF9640 , STS3623 , FDG6332CF085 , STS3621 , FDG6335N , FDG8842CZ , STS3620 , STS3429 , STS3426 .

Keywords - FDG6332C MOSFET datasheet

 FDG6332C cross reference
 FDG6332C equivalent finder
 FDG6332C lookup
 FDG6332C substitution
 FDG6332C replacement

 

 
Back to Top

 


 
.