FDG6332C Datasheet. Specs and Replacement

Type Designator: FDG6332C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SC70

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FDG6332C datasheet

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FDG6332C

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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Detailed specifications: FDG6318P, FDG6318PZ, FDG6320C, STS4501, FDG6321C, STS4300, FDG6322C, STS400, SI2302, STS3623, FDG6332CF085, STS3621, FDG6335N, FDG8842CZ, STS3620, STS3429, STS3426

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility