FDG6332C PDF and Equivalents Search

 

FDG6332C Specs and Replacement

Type Designator: FDG6332C

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SC70

FDG6332C substitution

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FDG6332C datasheet

 ..1. Size:93K  fairchild semi
 fdg6332c.pdf pdf_icon

FDG6332C

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FDG6332C

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 ..3. Size:277K  onsemi
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FDG6332C

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.1. Size:278K  onsemi
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FDG6332C

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Detailed specifications: FDG6318P , FDG6318PZ , FDG6320C , STS4501 , FDG6321C , STS4300 , FDG6322C , STS400 , K2611 , STS3623 , FDG6332CF085 , STS3621 , FDG6335N , FDG8842CZ , STS3620 , STS3429 , STS3426 .

Keywords - FDG6332C MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 


 
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