7N70G-TF1-T Datasheet and Replacement
Type Designator: 7N70G-TF1-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 97 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220F
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7N70G-TF1-T Datasheet (PDF)
7n70l-tf1-t 7n70g-tf1-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 7N70-M Preliminary Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N70-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switch
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: ME75N03 | RS1E300GN | STK14N05 | MEE4298T | SJMN600R60F | STD3PK50Z | RQ5E025AT
Keywords - 7N70G-TF1-T MOSFET datasheet
7N70G-TF1-T cross reference
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7N70G-TF1-T replacement
History: ME75N03 | RS1E300GN | STK14N05 | MEE4298T | SJMN600R60F | STD3PK50Z | RQ5E025AT



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