All MOSFET. FDH038AN08A1 Datasheet

 

FDH038AN08A1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDH038AN08A1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 125 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO247 TO3P TO3PF

 FDH038AN08A1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDH038AN08A1 Datasheet (PDF)

 ..1. Size:214K  fairchild semi
 fdh038an08a1.pdf

FDH038AN08A1 FDH038AN08A1

February 2003FDH038AN08A1N-Channel PowerTrench MOSFET75V, 80A, 3.8mFeatures Applications rDS(ON) = 3.5m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 125nC (Typ.), VGS = 10V Starter / Alternator Systems Internal Gate Resistor, Rg = 20 (Typ.) Electronic Power Steering Systems Low Miller Charge Electronic Valve Train Syste

 ..2. Size:301K  inchange semiconductor
 fdh038an08a1.pdf

FDH038AN08A1 FDH038AN08A1

isc N-Channel MOSFET Transistor FDH038AN08A1FEATURESDrain Current I = 22A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 3.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

Datasheet: FDG6332CF085 , STS3621 , FDG6335N , FDG8842CZ , STS3620 , STS3429 , STS3426 , FDG8850NZ , IRFZ44N , FDH047AN08A0 , FDH055N15A , FDH3632 , STS3411A , FDH44N50 , FDH45N50FF133 , FDH5500F085 , FDI030N06 .

 

 
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