FDH3632 Datasheet and Replacement
Type Designator: FDH3632
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 84 nC
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO247 TO3P TO3PF
FDH3632 substitution
FDH3632 Datasheet (PDF)
fdb3632 fdp3632 fdi3632 fdh3632.pdf

December 2008FDB3632 / FDP3632 / FDI3632 / FDH3632N-Channel PowerTrench MOSFET100V, 80A, 9mFeatures Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode Hi
fdh3632 fdp3632 fdb3632.pdf

MOSFET Power, N-Channel,POWERTRENCH)100 V, 80 A, 9 mWFDH3632, FDP3632,FDB3632www.onsemi.comFeatures RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A Qg (tot) = 84 nC (Typ.), VGS = 10 VVDSS RDS(ON) MAX ID MAX Low Miller Charge100 V 9 mW 80 A Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse)D These Devices are Pb-Free and are R
fdh3632.pdf

isc N-Channel MOSFET Transistor FDH3632FEATURESWith TO-247 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 9m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Keywords - FDH3632 MOSFET datasheet
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