FDI8441F085 Datasheet. Specs and Replacement

Type Designator: FDI8441F085  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm

Package: TO262 I2PAK

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FDI8441F085 datasheet

 7.1. Size:458K  fairchild semi
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FDI8441F085

May 2010 FDI8441_F085 N-Channel PowerTrench MOSFET 40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.2m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter / ... See More ⇒

 7.2. Size:303K  fairchild semi
 fdi8441.pdf pdf_icon

FDI8441F085

July 2007 tm FDI8441 N-Channel PowerTrench MOSFET 40V, 80A, 2.7m Features Applications Automotive Engine Control Typ rDS(on) = 2.2m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter / ... See More ⇒

 7.3. Size:282K  inchange semiconductor
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FDI8441F085

isc N-Channel MOSFET Transistor FDI8441 FEATURES Drain Current I =80A@ T =25 D C Drain Source Voltage- V =40V(Min) DSS Static Drain-Source On-Resistance R = 2.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power su pplies and general purpose... See More ⇒

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Detailed specifications: FDI040N06, FDI045N10AF102, STS3409L, FDI150N10, STS3409, FDI3632, STS3406, FDI8441, 8205A, FDL100N50F, FDM3622, STS3405, FDMA0104, FDMA1023PZ, FDMA1024NZ, FDMA1025P, FDMA1027P

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