All MOSFET. UTM4953G-S08-R Datasheet

 

UTM4953G-S08-R MOSFET. Datasheet pdf. Equivalent


   Type Designator: UTM4953G-S08-R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 4.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22.3 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOP8

 UTM4953G-S08-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UTM4953G-S08-R Datasheet (PDF)

 ..1. Size:175K  utc
 utm4953l-s08-r utm4953g-s08-r.pdf

UTM4953G-S08-R UTM4953G-S08-R

UNISONIC TECHNOLOGIES CO., LTD UTM4953 Power MOSFET DUAL P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM4953 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate SOP-8voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

 7.1. Size:159K  utc
 utm4953.pdf

UTM4953G-S08-R UTM4953G-S08-R

UNISONIC TECHNOLOGIES CO., LTD UTM4953 Preliminary Power MOSFET DUAL P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM4953 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate SOP-8voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF7822 | IXTA18P10T

 

 
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