UTM4953G-S08-R Specs and Replacement
Type Designator: UTM4953G-S08-R
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 4.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 340 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOP8
UTM4953G-S08-R substitution
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UTM4953G-S08-R datasheet
utm4953l-s08-r utm4953g-s08-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UTM4953 Power MOSFET DUAL P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM4953 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate SOP-8 voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)... See More ⇒
utm4953.pdf
UNISONIC TECHNOLOGIES CO., LTD UTM4953 Preliminary Power MOSFET DUAL P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM4953 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate SOP-8 voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)... See More ⇒
Detailed specifications: UTM2054G-AE3-R, UTM4052L-S08-R, UTM4052G-S08-R, UTM4052L-TN4-R, UTM4052G-TN4-R, UTM4052L-TN4-T, UTM4052G-TN4-T, UTM4953L-S08-R, IRFP460, UTM6016L-TA3-T, UTM6016G-TA3-T, UTM6016L-TN3-R, UTM6016G-TN3-R, UTM6016G-S08-R, UTM6016G-K08-5060-R, UTT18P10L-TN3-R, UTT18P10G-TN3-R
Keywords - UTM4953G-S08-R MOSFET specs
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UTM4953G-S08-R replacement
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