All MOSFET. UTT24N06G-TN3-R Datasheet

 

UTT24N06G-TN3-R Datasheet and Replacement


   Type Designator: UTT24N06G-TN3-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO252
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UTT24N06G-TN3-R Datasheet (PDF)

 0.1. Size:204K  utc
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UTT24N06G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UTT24N06 Power MOSFET 24A, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC UTT24N06 is an N-Channel enhancement mode MOSFET, it uses UTCs advanced technology to provide the customers with a minimum on state resistance and low gate charge, etc. The UTC UTT24N06 is suitable for switching application in Industry and converter ap

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: IRFH7545PBF | IPB052N04NG | SWB051R08ES | RU35122R | AP65SL190DWL | IPW50R190CE | PJF7NA80

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