UTT24N06G-TN3-R Datasheet and Replacement
Type Designator: UTT24N06G-TN3-R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO252
UTT24N06G-TN3-R substitution
UTT24N06G-TN3-R Datasheet (PDF)
utt24n06l-tm3-t utt24n06g-tm3-t utt24n06l-tn3-r utt24n06g-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT24N06 Power MOSFET 24A, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC UTT24N06 is an N-Channel enhancement mode MOSFET, it uses UTCs advanced technology to provide the customers with a minimum on state resistance and low gate charge, etc. The UTC UTT24N06 is suitable for switching application in Industry and converter ap
Datasheet: UTM6016G-K08-5060-R , UTT18P10L-TN3-R , UTT18P10G-TN3-R , UTT18P10L-TA3-T , UTT18P10G-TA3-T , UTT24N06L-TM3-T , UTT24N06G-TM3-T , UTT24N06L-TN3-R , 2N7000 , UTT25P10L-TA3-T , UTT25P10G-TA3-T , UTT25P10L-TF3-T , UTT25P10G-TF3-T , UTT25P10L-TN3-R , UTT25P10G-TN3-R , UTT25P10L-TQ2-T , UTT25P10G-TQ2-T .
History: AOT2904 | AP4435GJ | RSH070P05TB1 | IRHMS57064 | SQJ465EP | AP4503GM-HF | CEH2310
Keywords - UTT24N06G-TN3-R MOSFET datasheet
UTT24N06G-TN3-R cross reference
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UTT24N06G-TN3-R substitution
UTT24N06G-TN3-R replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AOT2904 | AP4435GJ | RSH070P05TB1 | IRHMS57064 | SQJ465EP | AP4503GM-HF | CEH2310
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