UTT24N06G-TN3-R MOSFET. Datasheet pdf. Equivalent
Type Designator: UTT24N06G-TN3-R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 115 nC
trⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO252
UTT24N06G-TN3-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UTT24N06G-TN3-R Datasheet (PDF)
utt24n06l-tm3-t utt24n06g-tm3-t utt24n06l-tn3-r utt24n06g-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT24N06 Power MOSFET 24A, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC UTT24N06 is an N-Channel enhancement mode MOSFET, it uses UTCs advanced technology to provide the customers with a minimum on state resistance and low gate charge, etc. The UTC UTT24N06 is suitable for switching application in Industry and converter ap
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