UTT4850G-S08-R Specs and Replacement

Type Designator: UTT4850G-S08-R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOP8

UTT4850G-S08-R substitution

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UTT4850G-S08-R datasheet

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 utt4850l-s08-r utt4850g-s08-r.pdf pdf_icon

UTT4850G-S08-R

UNISONIC TECHNOLOGIES CO., LTD UTT4850 Power MOSFET N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT4850 is a N-channel, it uses UTC s advanced technology to provide the customers with a minimum on state resistance and high switching speed. FEATURES SOP-8 *RDS(ON)... See More ⇒

 9.1. Size:140K  utc
 utt4815.pdf pdf_icon

UTT4850G-S08-R

UNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET 8 Amps, -30 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT4815 is a P-channel enhancement mode power MOSFET using UTC s advanced trench technology to provide customers with a minimum on-state resistance and extremely gate charge with a 25V gate rating The UTC UTT4815 is ESD protected and universally appl... See More ⇒

Detailed specifications: UTT30P06G-TM3-T, UTT30P06L-TQ2-T, UTT30P06G-TQ2-T, UTT30P06L-TQ2-R, UTT30P06G-TQ2-R, UTT30P06L-TN3-R, UTT30P06G-TN3-R, UTT4850L-S08-R, 5N65, UTT6NP10L-TN4-R, UTT6NP10G-TN4-R, UTT6NP10L-S08-R, UTT6NP10G-S08-R, 2P302A, 2P308A9, 2P308B9, 2P308G9

Keywords - UTT4850G-S08-R MOSFET specs

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