All MOSFET. UTT4850G-S08-R Datasheet

 

UTT4850G-S08-R Datasheet and Replacement


   Type Designator: UTT4850G-S08-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 70 nC
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOP8
 

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UTT4850G-S08-R Datasheet (PDF)

 ..1. Size:139K  utc
 utt4850l-s08-r utt4850g-s08-r.pdf pdf_icon

UTT4850G-S08-R

UNISONIC TECHNOLOGIES CO., LTD UTT4850 Power MOSFET N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT4850 is a N-channel, it uses UTCs advanced technology to provide the customers with a minimum on state resistance and high switching speed. FEATURES SOP-8*RDS(ON)

 9.1. Size:140K  utc
 utt4815.pdf pdf_icon

UTT4850G-S08-R

UNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET 8 Amps, -30 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT4815 is a P-channel enhancement mode power MOSFET using UTCs advanced trench technology to provide customers with a minimum on-state resistance and extremely gate charge with a 25V gate rating The UTC UTT4815 is ESD protected and universally appl

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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