2P308B9 Specs and Replacement
Type Designator: 2P308B9
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.08 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.02 A
Tj ⓘ - Maximum Junction Temperature: 100 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 250 Ohm
Package: SOT-23
2P308B9 substitution
- MOSFET ⓘ Cross-Reference Search
2P308B9 datasheet
Detailed specifications: UTT4850L-S08-R, UTT4850G-S08-R, UTT6NP10L-TN4-R, UTT6NP10G-TN4-R, UTT6NP10L-S08-R, UTT6NP10G-S08-R, 2P302A, 2P308A9, AON7506, 2P308G9, 2P308D9, 2P601A9, 2P7154AC, 2P7154BC, 2P7154VC, 2P802A, 2P819A
Keywords - 2P308B9 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: ME2325S-G | STP57N65M5
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