2P829A Specs and Replacement
Type Designator: 2P829A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: КТ-105-1
2P829A substitution
- MOSFET ⓘ Cross-Reference Search
2P829A datasheet
Detailed specifications: 2P7154AC, 2P7154BC, 2P7154VC, 2P802A, 2P819A, 2P821A, 2P821B, 2P826AC, RFP50N06, 2P829A9, 2P829B, 2P829B9, 2P829V, 2P829V9, 2P829G, 2P829G9, 2P829D
Keywords - 2P829A MOSFET specs
2P829A cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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