All MOSFET. 2P829B Datasheet

 

2P829B Datasheet and Replacement


   Type Designator: 2P829B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: КТ-105-1
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2P829B Datasheet (PDF)

 ..1. Size:195K  russia
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2P829B

U = 800 2829Ic = 15 R = 0,5 . - 2 -105-1

 0.1. Size:161K  russia
2p829b9.pdf pdf_icon

2P829B

U = 800 28299Ic = 15 R = 0,5 -106-1

 9.1. Size:154K  russia
2p829i9.pdf pdf_icon

2P829B

U = 200 28299Ic = 40 R = 0,05 -95-1

 9.2. Size:162K  russia
2p829j.pdf pdf_icon

2P829B

U = 30 2829Ic = 80 R = 0,03 . - 2 -43-1.

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BSZ035N03LSG | SVF9N90F

Keywords - 2P829B MOSFET datasheet

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