All MOSFET. 2P829V Datasheet

 

2P829V Datasheet and Replacement


   Type Designator: 2P829V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   tr ⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: КТ-105-1
 

 2P829V substitution

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2P829V Datasheet (PDF)

 ..1. Size:187K  russia
 2p829v.pdf pdf_icon

2P829V

U = 600 2829Ic = 20 R = 0,15 . - 2 -105-1

 0.1. Size:153K  russia
 2p829v9.pdf pdf_icon

2P829V

U = 600 28299Ic = 20 R = 0,15 -106-1

 9.1. Size:154K  russia
 2p829i9.pdf pdf_icon

2P829V

U = 200 28299Ic = 40 R = 0,05 -95-1

 9.2. Size:162K  russia
 2p829j.pdf pdf_icon

2P829V

U = 30 2829Ic = 80 R = 0,03 . - 2 -43-1.

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Datasheet: 2P819A , 2P821A , 2P821B , 2P826AC , 2P829A , 2P829A9 , 2P829B , 2P829B9 , 2N60 , 2P829V9 , 2P829G , 2P829G9 , 2P829D , 2P829D9 , 2P829E , 2P829E9 , 2P829J .

History: 2SK3900

Keywords - 2P829V MOSFET datasheet

 2P829V cross reference
 2P829V equivalent finder
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 2P829V substitution
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