All MOSFET. 2P829V9 Datasheet

 

2P829V9 Datasheet and Replacement


   Type Designator: 2P829V9
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   tr ⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: КТ-106-1
 

 2P829V9 substitution

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2P829V9 Datasheet (PDF)

 ..1. Size:153K  russia
 2p829v9.pdf pdf_icon

2P829V9

U = 600 28299Ic = 20 R = 0,15 -106-1

 8.1. Size:187K  russia
 2p829v.pdf pdf_icon

2P829V9

U = 600 2829Ic = 20 R = 0,15 . - 2 -105-1

 9.1. Size:154K  russia
 2p829i9.pdf pdf_icon

2P829V9

U = 200 28299Ic = 40 R = 0,05 -95-1

 9.2. Size:162K  russia
 2p829j.pdf pdf_icon

2P829V9

U = 30 2829Ic = 80 R = 0,03 . - 2 -43-1.

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - 2P829V9 MOSFET datasheet

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 2P829V9 equivalent finder
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