2P829V9 Specs and Replacement

Type Designator: 2P829V9

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: КТ-106-1

2P829V9 substitution

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2P829V9 datasheet

 ..1. Size:153K  russia
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2P829V9

U = 600 28299 Ic = 20 R = 0,15 -106-1 ... See More ⇒

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2P829V9

U = 600 2829 Ic = 20 R = 0,15 . - 2 -105-1... See More ⇒

 9.1. Size:154K  russia
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2P829V9

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 9.2. Size:162K  russia
 2p829j.pdf pdf_icon

2P829V9

U = 30 2829 Ic = 80 R = 0,03 . - 2 -43-1.... See More ⇒

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Detailed specifications: 2P821A, 2P821B, 2P826AC, 2P829A, 2P829A9, 2P829B, 2P829B9, 2P829V, IRF520, 2P829G, 2P829G9, 2P829D, 2P829D9, 2P829E, 2P829E9, 2P829J, 2P829J9

Keywords - 2P829V9 MOSFET specs

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