All MOSFET. 2P829G9 Datasheet

 

2P829G9 Datasheet and Replacement


   Type Designator: 2P829G9
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: КТ-95-1
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2P829G9 Datasheet (PDF)

 ..1. Size:160K  russia
 2p829g9.pdf pdf_icon

2P829G9

U = 200 28299Ic = 40 R = 0,05 -95-1

 8.1. Size:174K  russia
 2p829g.pdf pdf_icon

2P829G9

U = 200 2829Ic = 40 R = 0,05 . - 2 -43-1.

 9.1. Size:154K  russia
 2p829i9.pdf pdf_icon

2P829G9

U = 200 28299Ic = 40 R = 0,05 -95-1

 9.2. Size:162K  russia
 2p829j.pdf pdf_icon

2P829G9

U = 30 2829Ic = 80 R = 0,03 . - 2 -43-1.

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HSCE2631 | R6006JND3 | 1N70Z | AP30H80Q | FQP9N15 | CSD13302W | PDD0906

Keywords - 2P829G9 MOSFET datasheet

 2P829G9 cross reference
 2P829G9 equivalent finder
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