2P829G9 Datasheet and Replacement
Type Designator: 2P829G9
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 1200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: КТ-95-1
2P829G9 substitution
2P829G9 Datasheet (PDF)
Datasheet: 2P826AC , 2P829A , 2P829A9 , 2P829B , 2P829B9 , 2P829V , 2P829V9 , 2P829G , STF13NM60N , 2P829D , 2P829D9 , 2P829E , 2P829E9 , 2P829J , 2P829J9 , 2P829I9 , 2P903A .
History: FIR50N15PG | 2P829G | 2P829V9 | SPA08N80C3 | SPA07N65C3
Keywords - 2P829G9 MOSFET datasheet
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2P829G9 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: FIR50N15PG | 2P829G | 2P829V9 | SPA08N80C3 | SPA07N65C3
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