2P829G9 Specs and Replacement

Type Designator: 2P829G9

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: КТ-95-1

2P829G9 substitution

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2P829G9 datasheet

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2P829G9

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2P829G9

U = 200 2829 Ic = 40 R = 0,05 . - 2 -43-1.... See More ⇒

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2P829G9

U = 30 2829 Ic = 80 R = 0,03 . - 2 -43-1.... See More ⇒

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Detailed specifications: 2P826AC, 2P829A, 2P829A9, 2P829B, 2P829B9, 2P829V, 2P829V9, 2P829G, STF13NM60N, 2P829D, 2P829D9, 2P829E, 2P829E9, 2P829J, 2P829J9, 2P829I9, 2P903A

Keywords - 2P829G9 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.