All MOSFET. 2P829G9 Datasheet

 

2P829G9 Datasheet and Replacement


   Type Designator: 2P829G9
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: КТ-95-1
 

 2P829G9 substitution

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2P829G9 Datasheet (PDF)

 ..1. Size:160K  russia
 2p829g9.pdf pdf_icon

2P829G9

U = 200 28299Ic = 40 R = 0,05 -95-1

 8.1. Size:174K  russia
 2p829g.pdf pdf_icon

2P829G9

U = 200 2829Ic = 40 R = 0,05 . - 2 -43-1.

 9.1. Size:154K  russia
 2p829i9.pdf pdf_icon

2P829G9

U = 200 28299Ic = 40 R = 0,05 -95-1

 9.2. Size:162K  russia
 2p829j.pdf pdf_icon

2P829G9

U = 30 2829Ic = 80 R = 0,03 . - 2 -43-1.

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Datasheet: 2P826AC , 2P829A , 2P829A9 , 2P829B , 2P829B9 , 2P829V , 2P829V9 , 2P829G , IRF2807 , 2P829D , 2P829D9 , 2P829E , 2P829E9 , 2P829J , 2P829J9 , 2P829I9 , 2P903A .

History: BUK9K89-100E | HMS50N12DA | FQB30N06TM | JCS15N65SEI | IPB097N08N3 | NVTFS020N06C | WPM3401

Keywords - 2P829G9 MOSFET datasheet

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