2P829E Specs and Replacement

Type Designator: 2P829E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

tr ⓘ - Rise Time: 540 nS

Cossⓘ - Output Capacitance: 3200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: КТ-43А

2P829E substitution

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2P829E datasheet

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2P829E

U = 60 2829 Ic = 60 R = 0,005 . - 2 -43-... See More ⇒

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2P829E

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2P829E

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2P829E

U = 30 2829 Ic = 80 R = 0,03 . - 2 -43-1.... See More ⇒

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Detailed specifications: 2P829B, 2P829B9, 2P829V, 2P829V9, 2P829G, 2P829G9, 2P829D, 2P829D9, 8N60, 2P829E9, 2P829J, 2P829J9, 2P829I9, 2P903A, 2P903B, 2P903V, 2P922A

Keywords - 2P829E MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.