All MOSFET. 2P829E Datasheet

 

2P829E Datasheet and Replacement


   Type Designator: 2P829E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   tr ⓘ - Rise Time: 540 nS
   Cossⓘ - Output Capacitance: 3200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: КТ-43А
 

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2P829E Datasheet (PDF)

 ..1. Size:180K  russia
 2p829e.pdf pdf_icon

2P829E

U = 60 2829Ic = 60 R = 0,005 . - 2 -43-

 0.1. Size:170K  russia
 2p829e9.pdf pdf_icon

2P829E

U = 60 28299Ic = 60 R = 0,005 -95-1

 9.1. Size:154K  russia
 2p829i9.pdf pdf_icon

2P829E

U = 200 28299Ic = 40 R = 0,05 -95-1

 9.2. Size:162K  russia
 2p829j.pdf pdf_icon

2P829E

U = 30 2829Ic = 80 R = 0,03 . - 2 -43-1.

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Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2N90L-TND-R

Keywords - 2P829E MOSFET datasheet

 2P829E cross reference
 2P829E equivalent finder
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