2P829J Datasheet and Replacement
Type Designator: 2P829J
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
tr ⓘ - Rise Time: 76 nS
Cossⓘ - Output Capacitance: 3700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: КТ-43А
2P829J substitution
2P829J Datasheet (PDF)
Datasheet: 2P829V , 2P829V9 , 2P829G , 2P829G9 , 2P829D , 2P829D9 , 2P829E , 2P829E9 , IRF520 , 2P829J9 , 2P829I9 , 2P903A , 2P903B , 2P903V , 2P922A , 2P977A , 2P978A .
History: SISA18DN | SE3090K | SWD1N60DC
Keywords - 2P829J MOSFET datasheet
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History: SISA18DN | SE3090K | SWD1N60DC



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