All MOSFET. 2P829J Datasheet

 

2P829J Datasheet and Replacement


   Type Designator: 2P829J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   tr ⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 3700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: КТ-43А
 

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2P829J Datasheet (PDF)

 ..1. Size:162K  russia
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2P829J

U = 30 2829Ic = 80 R = 0,03 . - 2 -43-1.

 0.1. Size:157K  russia
 2p829j9.pdf pdf_icon

2P829J

U = 30 28299Ic = 80 R = 0,03

 9.1. Size:154K  russia
 2p829i9.pdf pdf_icon

2P829J

U = 200 28299Ic = 40 R = 0,05 -95-1

 9.2. Size:170K  russia
 2p829e9.pdf pdf_icon

2P829J

U = 60 28299Ic = 60 R = 0,005 -95-1

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Datasheet: 2P829V , 2P829V9 , 2P829G , 2P829G9 , 2P829D , 2P829D9 , 2P829E , 2P829E9 , IRF520 , 2P829J9 , 2P829I9 , 2P903A , 2P903B , 2P903V , 2P922A , 2P977A , 2P978A .

History: BUZ83 | 2SK1008-01 | H04N60F | SFF240J | NCE60NF055F | WMN30N80M3

Keywords - 2P829J MOSFET datasheet

 2P829J cross reference
 2P829J equivalent finder
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