2P829J MOSFET. Datasheet pdf. Equivalent
Type Designator: 2P829J
Marking Code: 2П829Ж
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 125 °C
trⓘ - Rise Time: 76 nS
Cossⓘ - Output Capacitance: 3700 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: КТ-43А
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VP0109 | 4N60L-TF3-T | TPC8014 | SML50W40 | FSF9150R | IPB60R600P6 | SE100P60
History: VP0109 | 4N60L-TF3-T | TPC8014 | SML50W40 | FSF9150R | IPB60R600P6 | SE100P60
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918