J112G Datasheet and Replacement
Type Designator: J112G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V
|Id| ⓘ - Maximum Drain Current: 0.05 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
Package: TO-92
J112G substitution
J112G Datasheet (PDF)
j112g j112rlrag.pdf

J111, J112JFET Chopper TransistorsN-Channel DepletionFeatureshttp://onsemi.com Pb-Free Packages are Available*1 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain-Gate Voltage VDG -35 VdcGATEGate -Source Voltage VGS -35 VdcGate Current IG 50 mAdc2 SOURCETotal Device Dissipation @ TA = 25C PD 350 mWDerate above = 25C 2.8 mW/CLead Temperature TL 300
Datasheet: 2P986A , 2P986B , 2P986V , 2P986G , 2P986D , 2P986EC , 2P998A , 2P998BC , IRFP460 , J112RLRAG , J300 , KP7178A , KP767A , KP767B , KP767V , KP777B , KP778B .
History: ME7114S | R6020ENZ1 | STP95N2LH5 | 3SK296 | FQA13N50C-F109 | KF3N60P | STB12NM60N
Keywords - J112G MOSFET datasheet
J112G cross reference
J112G equivalent finder
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J112G substitution
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History: ME7114S | R6020ENZ1 | STP95N2LH5 | 3SK296 | FQA13N50C-F109 | KF3N60P | STB12NM60N



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