J112G Specs and Replacement

Type Designator: J112G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V

|Id| ⓘ - Maximum Drain Current: 0.05 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm

Package: TO-92

J112G substitution

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J112G datasheet

 ..1. Size:85K  1
 j112g j112rlrag.pdf pdf_icon

J112G

J111, J112 JFET Chopper Transistors N-Channel Depletion Features http //onsemi.com Pb-Free Packages are Available* 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Gate Voltage VDG -35 Vdc GATE Gate -Source Voltage VGS -35 Vdc Gate Current IG 50 mAdc 2 SOURCE Total Device Dissipation @ TA = 25 C PD 350 mW Derate above = 25 C 2.8 mW/ C Lead Temperature TL 300 ... See More ⇒

Detailed specifications: 2P986A, 2P986B, 2P986V, 2P986G, 2P986D, 2P986EC, 2P998A, 2P998BC, IRF640, J112RLRAG, J300, KP7178A, KP767A, KP767B, KP767V, KP777B, KP778B

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