FDMA2002NZ MOSFET Datasheet: N-Ch, 30V, 2.9A. Full specification with pinout and replacement list

FDMA2002NZ Specs and Replacement

Type Designator: FDMA2002NZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.123 Ohm

Package: MICROFET

FDMA2002NZ substitution

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FDMA2002NZ datasheet

..1. Size:303K fairchild semi
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May 20 0 t tm tm tm FDMA2002NZ Dual N-Channel PowerTrench MOSFET General Description Features 2.9 A, 30 V RDS(ON) = 123 m @ VGS = 4.5 V This device is designed specifically as a single package RDS(ON) = 140 m @ VGS = 3.0 V solution for dual switching requirements in cellular RDS(ON) = 163 m @ VGS = 2.5 V handset and other ultra-portable applications. It fea... See More ⇒

..2. Size:432K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

9.1. Size:252K fairchild semi
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