KP809E Specs and Replacement
Type Designator: KP809E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 750 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 100 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 405 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO3
KP809E substitution
KP809E Specs
..1. Size:330K russia
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kp809a kp809b kp809v kp809g kp809d kp809e kp809a1 kp809b1 kp809v1 kp809g1 kp809d1 kp809e1 kp809b1-5 kp809b2-5.pdf
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Detailed specifications: KP809B , KP809B1 , KP809V , KP809V1 , KP809G , KP809G1 , KP809D , KP809D1 , STP75NF75 , KP809E1 , KP813A , KP813B , KP901A , KP901B , KP902A , KP903A , KP903B .
Keywords - KP809E MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
