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KP813B Specs and Replacement


   Type Designator: KP813B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO3
 

 KP813B substitution

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KP813B Specs

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KP813B

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Detailed specifications: KP809V1 , KP809G , KP809G1 , KP809D , KP809D1 , KP809E , KP809E1 , KP813A , IRF4905 , KP901A , KP901B , KP902A , KP903A , KP903B , KP903V , DN3134KW , QM3058M6 .

History: 2N4868 | 2N5197

Keywords - KP813B MOSFET specs

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