KP813B Specs and Replacement
Type Designator: KP813B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO3
KP813B substitution
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KP813B datasheet
Detailed specifications: KP809V1 , KP809G , KP809G1 , KP809D , KP809D1 , KP809E , KP809E1 , KP813A , IRF4905 , KP901A , KP901B , KP902A , KP903A , KP903B , KP903V , DN3134KW , QM3058M6 .
Keywords - KP813B MOSFET specs
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