AONY36352 Datasheet and Replacement
Type Designator: AONY36352
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 18.5(30) A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 230(520) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053(0.002) Ohm
Package: DFN5X6D
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AONY36352 Datasheet (PDF)
aony36352.pdf

AONY3635230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 49A 85A Low Gate Charge RDS(ON) (at VGS=10V)
aony36352.pdf

AONY3635230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 49A 85A Low Gate Charge RDS(ON) (at VGS=10V)
aony36356.pdf

AONY3635630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) at 4.5V Vgs ID (at VGS=10V) 32A 32A Low Gate Charge RDS(ON) (at VGS=10V)
aony36354.pdf

AONY3635430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 49A 85A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: FTK50N06P | BSB280N15NZ3G | 12N65KG-TF1-T | 2P903V | R5016ANJ | ELM13401CA | DH150N12B
Keywords - AONY36352 MOSFET datasheet
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History: FTK50N06P | BSB280N15NZ3G | 12N65KG-TF1-T | 2P903V | R5016ANJ | ELM13401CA | DH150N12B



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