AONY36352 MOSFET Datasheet: N-Ch, 30V, 18.5(30)A. Full specification with pinout and replacement list

AONY36352 Specs and Replacement

Type Designator: AONY36352

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18.5(30) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 230(520) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053(0.002) Ohm

Package: DFN5X6D

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AONY36352 datasheet

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AONY36352 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 49A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) at 4.5V Vgs ID (at VGS=10V) 32A 32A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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aony36354.pdf pdf_icon

AONY36354 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 49A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒