AONY36352 Datasheet and Replacement
Type Designator: AONY36352
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18.5(30) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 230(520) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0053(0.002) Ohm
Package: DFN5X6D
AONY36352 substitution
AONY36352 Datasheet (PDF)
aony36352.pdf
AONY3635230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 49A 85A Low Gate Charge RDS(ON) (at VGS=10V)
aony36352.pdf
AONY3635230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 49A 85A Low Gate Charge RDS(ON) (at VGS=10V)
aony36356.pdf
AONY3635630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) at 4.5V Vgs ID (at VGS=10V) 32A 32A Low Gate Charge RDS(ON) (at VGS=10V)
aony36354.pdf
AONY3635430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 49A 85A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: HY1808AP , HY1808AM , HY1808AB , HY1808APS , HY1808APM , MDP1991 , NCE8580 , SRC60R090B , 10N65 , HM25P06D , AP3N9R5H , EMB04N03H , HY3215W , KPS8N65F , QN3107M6N , S70N08R , S70N08S .
History: APT6010LFLL | R6015ANJ | G08N06S | MSW10N80 | FDMC86248 | RJK0214DPA | PTP88N07
Keywords - AONY36352 MOSFET datasheet
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History: APT6010LFLL | R6015ANJ | G08N06S | MSW10N80 | FDMC86248 | RJK0214DPA | PTP88N07
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