KPS8N65F PDF and Equivalents Search

 

KPS8N65F Specs and Replacement

Type Designator: KPS8N65F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TO220F

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KPS8N65F datasheet

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KPS8N65F

KPS8N65F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=650V, ID=8A Drain... See More ⇒

Detailed specifications: MDP1991, NCE8580, SRC60R090B, AONY36352, HM25P06D, AP3N9R5H, EMB04N03H, HY3215W, 5N60, QN3107M6N, S70N08R, S70N08S, S70N08RN, S70N08RP, STP200N3LL, BSS84KR, HM0565

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