All MOSFET. HM0565 Datasheet

 

HM0565 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM0565
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 0.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 30 Ohm
   Package: SOT-23

 HM0565 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM0565 Datasheet (PDF)

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 hm0565.pdf

HM0565 HM0565

Silicon N-Channel Power MOSFET HM0565General Description VDSS 650 VHM0565, the silicon N-channel EnhancedID 0.5 APD (TC=25) 3 WVDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMLL014N06HG4 | STB85NF55T4

 

 
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