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HM0565 Specs and Replacement

Type Designator: HM0565

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 30 Ohm

Package: SOT-23

HM0565 substitution

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HM0565 datasheet

 ..1. Size:1758K  cn hmsemi
 hm0565.pdf pdf_icon

HM0565

Silicon N-Channel Power MOSFET HM0565 General Description VDSS 650 V HM0565, the silicon N-channel Enhanced ID 0.5 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for... See More ⇒

Detailed specifications: KPS8N65F, QN3107M6N, S70N08R, S70N08S, S70N08RN, S70N08RP, STP200N3LL, BSS84KR, STF13NM60N, HM100N02, HM100N02K, HM100N03, HM100N03D, HM100N03K, HM100N06F, HM100N15, HM100N15A

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