All MOSFET. HM10P10Q Datasheet

 

HM10P10Q Datasheet and Replacement


   Type Designator: HM10P10Q
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: DFN3X3
 

 HM10P10Q substitution

   - MOSFET ⓘ Cross-Reference Search

 

HM10P10Q Datasheet (PDF)

 ..1. Size:785K  cn hmsemi
 hm10p10q.pdf pdf_icon

HM10P10Q

HM10P10Q P-Channel Enhancement Mode Power MOSFET Description The HM10P10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-10A RDS(ON)

 7.1. Size:676K  cn hmsemi
 hm10p10d.pdf pdf_icon

HM10P10Q

HM10P10D P-Channel Enhancement Mode Power MOSFET Description The HM10P10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-10A RDS(ON)

Datasheet: HM10N10Q , HM10N15D , HM10N60 , HM10N60F , HM10N70F , HM10N80A , HM10N80F , HM10P10D , IRFP064N , HM110N03D , HM1207E , HM120N03 , HM120N03K , HM120N04 , HM120N04D , HM120N04I , HM120N04K .

History: JCS10N60CC | 2SK1024-01

Keywords - HM10P10Q MOSFET datasheet

 HM10P10Q cross reference
 HM10P10Q equivalent finder
 HM10P10Q lookup
 HM10P10Q substitution
 HM10P10Q replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets

 

 
Back to Top

 


 
.