HM10P10Q MOSFET Datasheet: P-Ch, 100V, 10A. Full specification with pinout and replacement list

HM10P10Q Specs and Replacement

Type Designator: HM10P10Q

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 590 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: DFN3X3

HM10P10Q substitution

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HM10P10Q datasheet

..1. Size:785K cn hmsemi
hm10p10q.pdf pdf_icon

HM10P10Q P-Channel Enhancement Mode Power MOSFET Description The HM10P10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-10A RDS(ON) ... See More ⇒

7.1. Size:676K cn hmsemi
hm10p10d.pdf pdf_icon

HM10P10D P-Channel Enhancement Mode Power MOSFET Description The HM10P10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-10A RDS(ON) ... See More ⇒

Detailed specifications: HM10N10Q, HM10N15D, HM10N60, HM10N60F, HM10N70F, HM10N80A, HM10N80F, HM10P10D, IRFP064N, HM110N03D, HM1207E, HM120N03, HM120N03K, HM120N04, HM120N04D, HM120N04I, HM120N04K