All MOSFET. HM10P10Q Datasheet

 

HM10P10Q Datasheet and Replacement


   Type Designator: HM10P10Q
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: DFN3X3
 

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HM10P10Q Datasheet (PDF)

 ..1. Size:785K  cn hmsemi
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HM10P10Q

HM10P10Q P-Channel Enhancement Mode Power MOSFET Description The HM10P10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-10A RDS(ON)

 7.1. Size:676K  cn hmsemi
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HM10P10Q

HM10P10D P-Channel Enhancement Mode Power MOSFET Description The HM10P10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-10A RDS(ON)

Datasheet: HM10N10Q , HM10N15D , HM10N60 , HM10N60F , HM10N70F , HM10N80A , HM10N80F , HM10P10D , 5N50 , HM110N03D , HM1207E , HM120N03 , HM120N03K , HM120N04 , HM120N04D , HM120N04I , HM120N04K .

History: RU4089R | HGP1K2N20ML | FMH19N60E | AON6506 | PDD6902 | STP11NM60 | R6007ENJ

Keywords - HM10P10Q MOSFET datasheet

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