HM110N03D Datasheet and Replacement
Type Designator: HM110N03D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 991 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: DFN5X6
HM110N03D substitution
HM110N03D Datasheet (PDF)
hm110n03d.pdf
N-Channel Enhancement Mode Power MOSFET Description The HM110N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic Diagram RDS(ON)
Datasheet: HM10N15D , HM10N60 , HM10N60F , HM10N70F , HM10N80A , HM10N80F , HM10P10D , HM10P10Q , IRF730 , HM1207E , HM120N03 , HM120N03K , HM120N04 , HM120N04D , HM120N04I , HM120N04K , HM12N15I .
History: SM3381EHQG | SM9926DSK | AP9563GJ | SM2605PSC | STF10N95K5 | RU60D5H | 4N60G-TM3-T
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History: SM3381EHQG | SM9926DSK | AP9563GJ | SM2605PSC | STF10N95K5 | RU60D5H | 4N60G-TM3-T
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