HM110N03D PDF and Equivalents Search

 

HM110N03D Specs and Replacement

Type Designator: HM110N03D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 991 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: DFN5X6

HM110N03D substitution

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HM110N03D datasheet

 ..1. Size:547K  cn hmsemi
 hm110n03d.pdf pdf_icon

HM110N03D

N-Channel Enhancement Mode Power MOSFET Description The HM110N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic Diagram RDS(ON) ... See More ⇒

Detailed specifications: HM10N15D, HM10N60, HM10N60F, HM10N70F, HM10N80A, HM10N80F, HM10P10D, HM10P10Q, AO4468, HM1207E, HM120N03, HM120N03K, HM120N04, HM120N04D, HM120N04I, HM120N04K, HM12N15I

Keywords - HM110N03D MOSFET specs

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