HM13N50F MOSFET Datasheet: N-Ch, 500V, 13A. Full specification with pinout and replacement list

HM13N50F Specs and Replacement

Type Designator: HM13N50F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm

Package: TO220F

HM13N50F substitution

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HM13N50F datasheet

..1. Size:349K cn hmsemi
hm13n50 hm13n50f.pdf pdf_icon

HM13N50 / HM13N50F HM13N50 / HM13N50F 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 13.0A, 500V, RDS(on) = 0.48 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 45nC) This advanced technology has been espe cially tailored to Fast witching s minimize o n-state r esistance, pr ovide superior ... See More ⇒

9.1. Size:47K chenmko
chm13n07pagp.pdf pdf_icon

CHENMKO ENTERPRISE CO.,LTD CHM13N07PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 70 Volts CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power... See More ⇒

Detailed specifications: HM120N04K, HM12N15I, HM12N20D, HM12N60, HM12N60F, HM12N65, HM12N65F, HM13N50, IRFB4110, HM13P10, HM13P10K, HM1404, HM1404B, HM1404C, HM1404D, HM150N03, HM150N03D