All MOSFET. HM13N50F Datasheet

 

HM13N50F Datasheet and Replacement


   Type Designator: HM13N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO220F
 

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HM13N50F Datasheet (PDF)

 ..1. Size:349K  cn hmsemi
 hm13n50 hm13n50f.pdf pdf_icon

HM13N50F

HM13N50 / HM13N50FHM13N50 / HM13N50F500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 13.0A, 500V, RDS(on) = 0.48 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 45nC)This advanced technology has been espe cially tailored to Fast witchingsminimize o n-state r esistance, pr ovide superior

 9.1. Size:47K  chenmko
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HM13N50F

CHENMKO ENTERPRISE CO.,LTDCHM13N07PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 70 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

Datasheet: HM120N04K , HM12N15I , HM12N20D , HM12N60 , HM12N60F , HM12N65 , HM12N65F , HM13N50 , IRF640N , HM13P10 , HM13P10K , HM1404 , HM1404B , HM1404C , HM1404D , HM150N03 , HM150N03D .

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