All MOSFET. HM13P10 Datasheet

 

HM13P10 Datasheet and Replacement


   Type Designator: HM13P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO220
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HM13P10 Datasheet (PDF)

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HM13P10

HM13P10P-Channel Enhancement Mode Power MOSFET Description The HM13P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)

 0.1. Size:645K  cn hmsemi
 hm13p10k.pdf pdf_icon

HM13P10

P-Channel Enhancement Mode Power MOSFET Description The HM13P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)

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History: FMP11N60E | HLML6401 | NTMFD5C470NLT1G | MPSA80M670B | SQS405EN | HMS4444A | AP85T03GH-HF

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