HM13P10 Datasheet and Replacement
Type Designator: HM13P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO220
HM13P10 substitution
HM13P10 Datasheet (PDF)
hm13p10.pdf

HM13P10P-Channel Enhancement Mode Power MOSFET Description The HM13P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)
hm13p10k.pdf

P-Channel Enhancement Mode Power MOSFET Description The HM13P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)
Datasheet: HM12N15I , HM12N20D , HM12N60 , HM12N60F , HM12N65 , HM12N65F , HM13N50 , HM13N50F , IRFP260N , HM13P10K , HM1404 , HM1404B , HM1404C , HM1404D , HM150N03 , HM150N03D , HM150N03K .
History: 2SK3541MGP | STL70N10F3 | SFS12R08PNF | NTHS4101PT1G | FDZ375P | 2SK538
Keywords - HM13P10 MOSFET datasheet
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History: 2SK3541MGP | STL70N10F3 | SFS12R08PNF | NTHS4101PT1G | FDZ375P | 2SK538



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