HM13P10K PDF and Equivalents Search

 

HM13P10K Specs and Replacement

Type Designator: HM13P10K

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO220

HM13P10K substitution

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HM13P10K datasheet

 ..1. Size:645K  cn hmsemi
hm13p10k.pdf pdf_icon

HM13P10K

P-Channel Enhancement Mode Power MOSFET Description The HM13P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON) ... See More ⇒

 7.1. Size:609K  cn hmsemi
hm13p10.pdf pdf_icon

HM13P10K

HM13P10 P-Channel Enhancement Mode Power MOSFET Description The HM13P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON) ... See More ⇒

Detailed specifications: HM12N20D, HM12N60, HM12N60F, HM12N65, HM12N65F, HM13N50, HM13N50F, HM13P10, IRFP260N, HM1404, HM1404B, HM1404C, HM1404D, HM150N03, HM150N03D, HM150N03K, HM15N02Q

Keywords - HM13P10K MOSFET specs

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