HM1607 Datasheet and Replacement
Type Designator: HM1607
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 380 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 955 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
Package: TO220
HM1607 substitution
HM1607 Datasheet (PDF)
hm1607.pdf

HM1607N-Channel Trench Power MOSFET General Description The HM1607 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM.DS(ON) Features V =75V; I =150A@ V =10V; DS D GSR
hm1607d.pdf

HM1607DN-Channel Trench Power MOSFET General Description The HM1607D is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM.DS(ON) Features V =75V; I =150A@ V =10V; DS D GSR
Datasheet: HM150N03K , HM15N02Q , HM15N10D , HM15N10K , HM15N50 , HM15N50F , HM15P10D , HM15P55K , IRFP260 , HM1607D , HM16N02D , HM16N50 , HM16N50F , HM16N60F , HM16N65F , HM16P12D , HM17N10K .
History: FQI2N30TU
Keywords - HM1607 MOSFET datasheet
HM1607 cross reference
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History: FQI2N30TU



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