HM1607 Specs and Replacement
Type Designator: HM1607
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 380 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 955 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
Package: TO220
HM1607 substitution
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HM1607 datasheet
hm1607.pdf
HM1607 N-Channel Trench Power MOSFET General Description The HM1607 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM. DS(ON) Features V =75V; I =150A@ V =10V; DS D GS R ... See More ⇒
hm1607d.pdf
HM1607D N-Channel Trench Power MOSFET General Description The HM1607D is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM. DS(ON) Features V =75V; I =150A@ V =10V; DS D GS R ... See More ⇒
Detailed specifications: HM150N03K, HM15N02Q, HM15N10D, HM15N10K, HM15N50, HM15N50F, HM15P10D, HM15P55K, 2SK3878, HM1607D, HM16N02D, HM16N50, HM16N50F, HM16N60F, HM16N65F, HM16P12D, HM17N10K
Keywords - HM1607 MOSFET specs
HM1607 cross reference
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