HM1607D PDF and Equivalents Search

 

HM1607D Specs and Replacement

Type Designator: HM1607D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 380 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 955 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm

Package: TO263

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HM1607D datasheet

 ..1. Size:868K  cn hmsemi
 hm1607d.pdf pdf_icon

HM1607D

HM1607D N-Channel Trench Power MOSFET General Description The HM1607D is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM. DS(ON) Features V =75V; I =150A@ V =10V; DS D GS R ... See More ⇒

 8.1. Size:656K  cn hmsemi
 hm1607.pdf pdf_icon

HM1607D

HM1607 N-Channel Trench Power MOSFET General Description The HM1607 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM. DS(ON) Features V =75V; I =150A@ V =10V; DS D GS R ... See More ⇒

Detailed specifications: HM15N02Q, HM15N10D, HM15N10K, HM15N50, HM15N50F, HM15P10D, HM15P55K, HM1607, STP75NF75, HM16N02D, HM16N50, HM16N50F, HM16N60F, HM16N65F, HM16P12D, HM17N10K, HM180N02

Keywords - HM1607D MOSFET specs

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