HM1607D MOSFET. Datasheet pdf. Equivalent
Type Designator: HM1607D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 380 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 150 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 158 nC
trⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 955 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
Package: TO263
HM1607D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM1607D Datasheet (PDF)
hm1607d.pdf
HM1607DN-Channel Trench Power MOSFET General Description The HM1607D is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM.DS(ON) Features V =75V; I =150A@ V =10V; DS D GSR
hm1607.pdf
HM1607N-Channel Trench Power MOSFET General Description The HM1607 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM.DS(ON) Features V =75V; I =150A@ V =10V; DS D GSR
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
