All MOSFET. HM1607D Datasheet

 

HM1607D Datasheet and Replacement


   Type Designator: HM1607D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 380 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 955 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: TO263
 

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HM1607D Datasheet (PDF)

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HM1607D

HM1607DN-Channel Trench Power MOSFET General Description The HM1607D is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM.DS(ON) Features V =75V; I =150A@ V =10V; DS D GSR

 8.1. Size:656K  cn hmsemi
 hm1607.pdf pdf_icon

HM1607D

HM1607N-Channel Trench Power MOSFET General Description The HM1607 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM.DS(ON) Features V =75V; I =150A@ V =10V; DS D GSR

Datasheet: HM15N02Q , HM15N10D , HM15N10K , HM15N50 , HM15N50F , HM15P10D , HM15P55K , HM1607 , 12N60 , HM16N02D , HM16N50 , HM16N50F , HM16N60F , HM16N65F , HM16P12D , HM17N10K , HM180N02 .

History: 2SK669 | ELM14430AA | IXTH6N150 | RJK0629DPE | FDMS86255ET150 | AO4886 | BF1108

Keywords - HM1607D MOSFET datasheet

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