All MOSFET. HM18DN03Q Datasheet

 

HM18DN03Q Datasheet and Replacement


   Type Designator: HM18DN03Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 318 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0108 Ohm
   Package: DFN3X3E-8-EP2
 

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HM18DN03Q Datasheet (PDF)

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HM18DN03Q

Dual N-Channel Enhancement Mode MOSFET HM18DN03QDESCRIPTIONTheHM18DN03Qusesadvanced trench technology to provideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES Channel1RDS(ON)

Datasheet: HM16N50F , HM16N60F , HM16N65F , HM16P12D , HM17N10K , HM180N02 , HM180N02D , HM180N02K , K4145 , HM18N03D , HM18N40 , HM18N40A , HM18N40F , HM18N50A , HM18N50F , HM18P10 , HM18P10K .

History: IRLU2705PBF

Keywords - HM18DN03Q MOSFET datasheet

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