All MOSFET. HM18P10 Datasheet

 

HM18P10 Datasheet and Replacement


   Type Designator: HM18P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO220
 

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HM18P10 Datasheet (PDF)

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HM18P10

HM18P10P-Channel Enhancement Mode Power MOSFET Description The HM18P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON)

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HM18P10

8 K P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON)

Datasheet: HM180N02K , HM18DN03Q , HM18N03D , HM18N40 , HM18N40A , HM18N40F , HM18N50A , HM18N50F , IRLZ44N , HM18P10K , HM19N40 , HM1N50MR , HM1N60 , HM1N60PR , HM1N60R , HM1P10MR , HM1P15MR .

History: GSM1073E | HM18P10K | CS7002 | FDMT800150DC | NVHL020N120SC1 | CTD02N4P8 | 2SK2782

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